Method for selectively removing metal compound dielectric layer with high dielectric constant

Method for selectively removing metal compound dielectric layer with high dielectric constant

A method for selectively removing a metal compound dielectric layer with a high dielectric constant comprises using an etching gas having a high selectivity to the metal compound dielectric layer to selectively removing the metal compound dielectric layer formed on the surface of a silicon material...

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Hauptverfasser: CHIU, YUAN-HUNG, HSU, PENG-FU, SUNG, MEI-HUI, PERNG, BAWING
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator CHIU, YUAN-HUNG
HSU, PENG-FU
SUNG, MEI-HUI
PERNG, BAWING
description A method for selectively removing a metal compound dielectric layer with a high dielectric constant comprises using an etching gas having a high selectivity to the metal compound dielectric layer to selectively removing the metal compound dielectric layer formed on the surface of a silicon material without damaging the silicon material layer. The etching gas includes a halogen-containing gas, or a mixture gas containing a halogen gas and an inert gas, or a mixture gas containing a halogen gas, an inert gas, and an oxidant gas.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method for selectively removing metal compound dielectric layer with high dielectric constant
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