Method for selectively removing metal compound dielectric layer with high dielectric constant
A method for selectively removing a metal compound dielectric layer with a high dielectric constant comprises using an etching gas having a high selectivity to the metal compound dielectric layer to selectively removing the metal compound dielectric layer formed on the surface of a silicon material...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A method for selectively removing a metal compound dielectric layer with a high dielectric constant comprises using an etching gas having a high selectivity to the metal compound dielectric layer to selectively removing the metal compound dielectric layer formed on the surface of a silicon material without damaging the silicon material layer. The etching gas includes a halogen-containing gas, or a mixture gas containing a halogen gas and an inert gas, or a mixture gas containing a halogen gas, an inert gas, and an oxidant gas. |
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