Method of manufacturing semiconductor integrated circuit device

The subject of the present invention is to provide a method for manufacturing semiconductor integrated circuit device that can prevent generation of foreign matters caused by the separation of a thin film at the edge of a wafer. In the invention, the entire region of the edge of a wafer 1 is polished by using three polishing drums 4A to 4C, for example. The polishing drum 4A relatively polishes the upper face of the edge of the wafer 1; the polishing drum 4B relatively polishes the center of the edge of the wafer 1; and the polishing drum 4C relatively polishes the lower face of the edge of the wafer 1. Thus, a method for preventing the generation of foreign matters caused by the separation of a thin film at the edge of a wafer is provided.