Method for improving the flicker phenomenon in a thin film transistor for a liquid crystal display
The present invention provides a method for improving the flicker phenomenon in a thin film transistor. The method respectively applies the hydrogen and nitrogen contained plasma treatment to the manufacture process of the thin film transistor after the insulation layer is finished. Then, an active...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The present invention provides a method for improving the flicker phenomenon in a thin film transistor. The method respectively applies the hydrogen and nitrogen contained plasma treatment to the manufacture process of the thin film transistor after the insulation layer is finished. Then, an active layer is formed on the insulation layer. The method may improve the interface between the insulation layer and the active layer to increase the capacitance value of the maintenance capacitor to improve the quality of the liquid crystal display. |
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