Method for shallow trench isolation
A method for a shallow trench isolation comprises: providing a semiconductor substrate; etching the semiconductor substrate to form a trench; forming a pad oxide liner layer on the inside of the trench; using a nitrogen plasma to form a nitride surface on the surface of the oxide liner layer; perfor...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A method for a shallow trench isolation comprises: providing a semiconductor substrate; etching the semiconductor substrate to form a trench; forming a pad oxide liner layer on the inside of the trench; using a nitrogen plasma to form a nitride surface on the surface of the oxide liner layer; performing an annealing process on the semiconductor substrate; and using an insulation layer to fill up the trench in order to form a trench isolation region. |
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