Interconnect layer structure for stress migration test and stress migration test method of interconnect layer

A kind of interconnect layer structure for stress migration test is provided in the present invention, in which the amount of resistance variation generated due to the stress migration of conduction line and dielectric layer is measured. The interconnect layer structure includes the followings: the first and the second conduction lines located on the first metal layer; the third conduction line located on the second metal layer; the first and the second dielectric layers located between the first and the second metal layers, in which the first dielectric layer is connected between the first end of the first conduction line and the first end of the third conduction line, the second dielectric layer is connected between the first end of the second conduction line and the second end of the third conduction line, and the first and the second conduction lines, respectively, are electrically connected to the third conduction line; and the first, the second, the third and the fourth bonding pads, which are connected to the first and the second ends of the third conduction line, the second end of the first conduction line and the second end of the second conduction line, respectively.