Method and system for forming insulating films

This invention provides a highly reliable method and system for forming insulating films. A gate insulating film 104 of a MISFET100 is composed of a silicon oxide film 106, a silicon nitride film 107, and a high dielectric constant film 108. The silicon oxide film 106 and the silicon nitride film 10...

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Bibliographische Detailangaben
Hauptverfasser:	KUMAI, TOSHIKAZU, NAKANISHI, TOSHIO, MURAKAWA, SHIGEMI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	This invention provides a highly reliable method and system for forming insulating films. A gate insulating film 104 of a MISFET100 is composed of a silicon oxide film 106, a silicon nitride film 107, and a high dielectric constant film 108. The silicon oxide film 106 and the silicon nitride film 107 are formed by a microwave plasma processing using a radial line slot antenna.