CMOS structure with non-epitaxial raised source/drain and self-aligned gate and method of manufacture

CMOS structure with non-epitaxial raised source/drain and self-aligned gate and method of manufacture

A CMOS structure and method of achieving self-aligned raised source/drain for CMOS structures on SOI without relying on selective epitaxial growth of silicon. In the method, CMOS structures are provided by performing sacraficial oxidation so that oxidation occurs on the surface of both the SOI and B...

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Bibliographische Detailangaben
Hauptverfasser: SHAHIDI, GHAVAM G, ASSADERAGHI, FARIBORZ, AJMERA, ATUL C, PARK, HEEMYONG
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A CMOS structure and method of achieving self-aligned raised source/drain for CMOS structures on SOI without relying on selective epitaxial growth of silicon. In the method, CMOS structures are provided by performing sacraficial oxidation so that oxidation occurs on the surface of both the SOI and BOX interface. This allows for oxide spacer formation for gate-to-source/drain isolation which makes raised source/drain fabrication without increasing contact resistance possible.