Method for fabricating metallic bit-line contacts

Method for fabricating metallic bit-line contacts

According to the invention, to make contact between a bit line (55) and a select transistor (30) of a dynamic memory unit on a semiconductor wafer, a contact hole (50) is filled with a metal or a metal alloy, the semiconductor substrate (10) having a doping in the contact hole (50) and a liner layer...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: URBANSKY, NORBERT, STAUB, RALF, AMON, JUERGEN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:According to the invention, to make contact between a bit line (55) and a select transistor (30) of a dynamic memory unit on a semiconductor wafer, a contact hole (50) is filled with a metal or a metal alloy, the semiconductor substrate (10) having a doping in the contact hole (50) and a liner layer (60) being introduced between the semiconductor substrate (10) and the metal filling (55).