Method for producing dielectric isolated silicon (DIS)

A method for producing a dielectric isolated silicon (DIS) comprises: conformally forming a first dielectric layer in the opening of a substrate having an opening; using an ion implantation method to form a boron doped layer having a doping concentration of 10 to 10 atom/cm on the interface between the surface of the substrate and the first dielectric layer; anisotropically etching the first dielectric layer to form a dielectric spacer on the inner wall of the opening; using a selective epitaxial method to form a single crystal silicon layer in the opening; sequentially performing an anodic treatment and a thermal oxidation treatment to convert the doping layer on the periphery of the single crystal silicon layer into a second dielectric layer as a dielectric isolation layer; and polishing off the second dielectric layer until exposing the surface of the silicon layer, thereby completing the production of the dielectric isolated silicon structure.