Method of producing a bonding pad
A method of producing a bonding pad that can be applied on a wafer having integrated circuits formed thereon is provided. A first passivation layer, a second passivation layer and a patterned photoresist are sequentially formed on the wafer. The photoresist layer is used as an etching mask to etch t...
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Zusammenfassung: | A method of producing a bonding pad that can be applied on a wafer having integrated circuits formed thereon is provided. A first passivation layer, a second passivation layer and a patterned photoresist are sequentially formed on the wafer. The photoresist layer is used as an etching mask to etch the second passivation layer longitudinally and then laterally. Next, the first passivation layer is longitudinally etched to expose a metal line of the integrated circuits. The photoresist layer is removed. A bonding pad metal layer is formed on the wafer, and the thickness of the bonding pad metal layer is less than that of the second passivation layer. The bonding pad metal layer is patterned to form a bonding pad covering the metal line and the surrounding second passivation layer. |
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