Method for fabricating semiconductor device suitable for image sensor

In a method for fabricating a semiconductor device suitable for an image sensor, a bonding pad is formed on a lower insulating layer after the lower insulating layer is formed on a substrate. Then, an upper insulating layer is formed over the substrate to cover the bonding pad. The upper insulating...

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Bibliographische Detailangaben
1. Verfasser:	KIM, JAE-KAP
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC COMMUNICATION TECHNIQUE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS PHYSICS PICTORIAL COMMUNICATION, e.g. TELEVISION SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	In a method for fabricating a semiconductor device suitable for an image sensor, a bonding pad is formed on a lower insulating layer after the lower insulating layer is formed on a substrate. Then, an upper insulating layer is formed over the substrate to cover the bonding pad. The upper insulating layer is selectively removed to uncover a top portion of the bonding pad. Subsequently, a protection layer is formed over the substrate. After color filter elements are formed on the protection layer, a planar layer is formed to cover the color filter elements. Finally, microlenses are formed on the planar layer.