Method for minimizing the vapor deposition of tungsten oxide during the selective side wall oxidation of tungsten-silicon gates

Method for minimizing the vapor deposition of tungsten oxide during the selective side wall oxidation of tungsten-silicon gates

During the selective oxidation of gate structures which include a polycrystalline silicon layer and a tungsten layer, which is known per se, the vapor deposition of tungsten oxide is prevented or at least greatly reduced by a special process. The gate structure is acted on by a hydrogen-containing,...

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Bibliographische Detailangaben
Hauptverfasser: FRIGGE, STEFFEN, SACHSE, JENS-UWE, STADTMUELLER, MICHAEL, KEGEL, WILHELM, HAYN, REGINA+
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:During the selective oxidation of gate structures which include a polycrystalline silicon layer and a tungsten layer, which is known per se, the vapor deposition of tungsten oxide is prevented or at least greatly reduced by a special process. The gate structure is acted on by a hydrogen-containing, nonaqueous inert gas before and, if appropriate, after a treatment step with a hydrogen/water mixture.