Semiconductor device and fabrication process thereof

A semiconductor device includes a pad electrode formed on a substrate and a bump electrode formed on the pad, wherein the pad electrode carries an uneven flaw, and there is provided a pattern between the pad electrode and the bump electrode such that the pattern covers the flaw.

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Bibliographische Detailangaben
Hauptverfasser: MURATA, KOICHI, TAMAGAWA, MICHIAKI, WATANABE, EIJI, ISHIGURI, MASAHIKO, CHIBA, SHUICHI
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A semiconductor device includes a pad electrode formed on a substrate and a bump electrode formed on the pad, wherein the pad electrode carries an uneven flaw, and there is provided a pattern between the pad electrode and the bump electrode such that the pattern covers the flaw.