A method of elevating quality of a reclaimed wafer

A method of elevating quality of a reclaimed wafer

A method of elevating quality of a reclaimed wafer. A thin film on a reclaimed wafer and a surface layer of the reclaimed wafer is removed by polishing or acid etching. An epitaxial silicon layer is deposited on the reclaimed wafer. The excellent and integral structure of the epitaxial silicon layer...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: YU, HUNG-TIEN, LU, WEING, SU, SHIHIEH
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method of elevating quality of a reclaimed wafer. A thin film on a reclaimed wafer and a surface layer of the reclaimed wafer is removed by polishing or acid etching. An epitaxial silicon layer is deposited on the reclaimed wafer. The excellent and integral structure of the epitaxial silicon layer can avoid generating defects during succeeding processes. Then, the reclaimed wafer can be used to monitor conditions of a semiconductor process.