Pattern-creating method, pattern-processing apparatus and exposure mask

The present invention provides a pattern-creating method capable of optimizing formation of a transfer pattern with a high degree of precision and with ease. Performing a lithography process, the method includes the steps of determining a line-width-measurement location in a design pattern on the basis of a condition set in advance; adding a length-measurement-location recognition pattern at the determined location; classifying pattern portions composing the design pattern by degree of importance with which the shape of the design pattern is to be maintained; carrying out a simulation of transfer-pattern creation on the basis of the design pattern; measuring a line width of a transfer pattern at the location of the length-measurement-location recognition pattern; and evaluating a result of the simulation for each of the-degrees of importance, which are associated with the respective pattern portions composing the design pattern, and for each portions of the transfer pattern.