Method for producing thin film transistor

A method for producing a thin film transistor (TFT) including manufacturing a gate, a gate insulation layer, a channel layer, and a source/drain, in which the production of the channel layer includes using a low deposition rate (chemical vapor deposition) to form a first amorphous silicon layer; usi...

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Bibliographische Detailangaben
Hauptverfasser:	SHIU, YI-TSAI, LI, YU-JOU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	A method for producing a thin film transistor (TFT) including manufacturing a gate, a gate insulation layer, a channel layer, and a source/drain, in which the production of the channel layer includes using a low deposition rate (chemical vapor deposition) to form a first amorphous silicon layer; using a high deposition rate to form a second amorphous silicon layer; and forming a N+ doped amorphous layer. According to the present invention, while forming the first amorphous silicon layer, the flow ratio of H2/SiH4 is adjusted to 0.40 to 1.00 to increase the number of defects in the first amorphous layer. When the TFT is exposed to light, the photo leakage current formed in the channel layer will be trapped in the defects of the first amorphous layer, thereby greatly reducing the photo leakage current of the TFT.