Tungsten chemical mechanical polishing process capable of preventing the formation of tungsten oxide

A tungsten chemical mechanical polishing process capable of preventing the formation of tungsten oxide comprises: providing a substrate having a contact opening; conformally forming a barrier layer on the substrate having the contact opening; forming a tungsten layer on the barrier layer and filling...

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Bibliographische Detailangaben
Hauptverfasser:	YOO, MING-HUA+, WANG, YING-LANG, CHENG, YI-LUNG, LIU, CHI-WEN, LIN, SHIHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	A tungsten chemical mechanical polishing process capable of preventing the formation of tungsten oxide comprises: providing a substrate having a contact opening; conformally forming a barrier layer on the substrate having the contact opening; forming a tungsten layer on the barrier layer and filling up the contact opening; performing a first stage chemical mechanical polishing; polishing the tungsten metal layer and the barrier layer until reaching the surface of the substrate in order to form a tungsten plug in the contact window; performing a second stage chemical mechanical polishing; adding ammonium hydroxide; polishing the tungsten plug; and performing a cleaning after a third stage chemical mechanical polishing.