Polishing head for wafer, and method for polishing

A polishing head (200) for a chemical-mechanical polishing machine that holds a semiconductor wafer (150) against a polishing pad (140) has a chuck (295) with a pressure chamber (210) to apply a down force substantially equally to the wafer backside (152). An electrode arrangement (270) within the c...

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Bibliographische Detailangaben
Hauptverfasser:	GLASHAUSER, WALTER, HAGGART, DAVID, TEICHGRABER, LUTZ, EBNER, KATRIN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TRANSPORTING
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Beschreibung
Zusammenfassung:	A polishing head (200) for a chemical-mechanical polishing machine that holds a semiconductor wafer (150) against a polishing pad (140) has a chuck (295) with a pressure chamber (210) to apply a down force substantially equally to the wafer backside (152). An electrode arrangement (270) within the chamber (210) is located coplanar to the wafer (150) to provide compensation to wafer or chuck irregularities by applying a compensation force having a distribution corresponding to the irregularities.