Method and apparatus for multiphase chemical mechanical polishing

The present invention is a method and apparatus for CMP processing that reduces scratching of the insulating film and conductor lines of a wafer. More specifically, the method and apparatus introduce an aqueous solution to the polishing pad and wafer during various intervals of the polishing procedu...

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Bibliographische Detailangaben
Hauptverfasser:	CRUZ, JOSE L, HUYNH, CUC K, WALKER, DAVID L
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CLEANING CLEANING IN GENERAL DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING PREVENTION OF FOULING IN GENERAL SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	The present invention is a method and apparatus for CMP processing that reduces scratching of the insulating film and conductor lines of a wafer. More specifically, the method and apparatus introduce an aqueous solution to the polishing pad and wafer during various intervals of the polishing procedure.