Manufacturing method to activate high-resistance P-type film into low-resistance P-type film

A novel manufacturing method is disclosed to activate high-resistance P-type film into low-resistance P-type film by the energy generated from the temperature gradient variation, wherein the said high-resistance P-type film is P-doped group III metal nitride film, or P-doped II-VI compound film. Constant temperature operation can be proceeded in the present invention according to the application requirement in the temperature gradient variation process, so that the constant temperature period can be less than 1 min. thus, the purpose of P-doped activation can be achieved by rapid raising/lowering the temperature, and further reduce the diffusion problem derived from the long-term heat treatment.