Structure and manufacturing method of capacitor device with metal-insulator-metal structure

A kind of manufacturing method for capacitor device with metal-insulator-metal structure is disclosed in the present invention. In the invented method, a substrate is provided, on which a plurality of the first metal conduction wires are formed and the inner dielectric layer is formed, Then, plural dielectric windows, which are electrically connected with the first metal conduction wire and have at least the first dielectric window, are formed in the inner dielectric layer. After that, a stacked layer composed of metal-insulator-metal is formed on the first dielectric window, in which the metal-insulator-metal stacked layer, the first dielectric window and the first metal conduction wire electrically connected with the first dielectric window form a capacitor. Then, the second metal conduction wire, which is electrically connected with the dielectric window and the capacitor, is formed on the substrate.