Semiconductor device and method of manufacturing the same
A semiconductor device including an insulating film (6) embedded in a concave portion is disclosed. A nitride film liner (3) may be formed inside a concave portion formed in a semiconductor substrate (1). An anti-static insulating film (10) may be formed on nitride film liner (3) by a thermal chemic...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A semiconductor device including an insulating film (6) embedded in a concave portion is disclosed. A nitride film liner (3) may be formed inside a concave portion formed in a semiconductor substrate (1). An anti-static insulating film (10) may be formed on nitride film liner (3) by a thermal chemical vapor deposition (CVD) method. Embedded insulating film (6) may be formed on the anti-static insulating film (10) by a high-density plasma CVD method so as to essentially fill the concave portion. In this way, peeling off of insulating film (6) may be reduced and a formation of a groove in a trench isolation structure may be suppressed. |
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