Semiconductor processing silica soot abrasive slurry method for integrated circuit microelectronics

The invention utilize colloidal silica soot in a semiconductor process for chemical-mechanical planarizing a semiconductor integrated circuit workpiece with a slurry. The particulate abrasive agent colloidal solid sphere fused silica soot provides a beneficial CMP slurry/process for semiconductor de...

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Bibliographische Detailangaben
Hauptverfasser:	SABIA, ROBERT, SELL, ROBERT D, UKRAINCZYK, LJERKA, STEVENS, HARRIE JAMES
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES TRANSPORTING
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Beschreibung
Zusammenfassung:	The invention utilize colloidal silica soot in a semiconductor process for chemical-mechanical planarizing a semiconductor integrated circuit workpiece with a slurry. The particulate abrasive agent colloidal solid sphere fused silica soot provides a beneficial CMP slurry/process for semiconductor device manufacturing compared to standard semiconductor CMP slurries with conventional colloidal sol-gel or fumed silica.