Manufacturing method of metal capacitor capable of avoiding copper layer damage

A kind of manufacturing method of metal capacitor capable of avoiding copper layer damage is proposed in the present invention. At first, a semiconductor substrate having at least one damascene copper structure formed in the insulation layer and the etching stop layer is provided. Then, the first etching stop layer and the dielectric layer are sequentially formed on the damascene copper structure. After that, a capacitor opening is formed in the first etching stop layer and the dielectric layer on the damascene copper structure, and is followed by forming the first metal layer in the capacitor opening to fill up the capacitor opening. Finally, a metal capacitor is formed on the first metal layer.