Method of improving photoresist etching selectivity of dielectric anti-reflection coating layer

Method of improving photoresist etching selectivity of dielectric anti-reflection coating layer

This invention provides a method of improving photoresist etching selectivity of dielectric anti-reflection coating (DARC) layer, which employs etching gases consisting of CHF3 argon and nitrogen in the same etching chamber to perform etching process of the DARC layer and metal layer.

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Bibliographische Detailangaben
Hauptverfasser: LI, JIUN-HUNG, TSAI, SHRANG
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:This invention provides a method of improving photoresist etching selectivity of dielectric anti-reflection coating (DARC) layer, which employs etching gases consisting of CHF3 argon and nitrogen in the same etching chamber to perform etching process of the DARC layer and metal layer.