Magnetron plasma processing apparatus

When subjecting a substrate (30) to magnetron plasma processing, a dipole magnet (21) having a plurality of anisotropic segment magnets (22) arranged around an outer wall of a chamber (1) in a ring-shape is provided to thereby form a magnetic field gradient having a magnetic field intensity that gra...

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Bibliographische Detailangaben
Hauptverfasser:	YAMASAKI, TOMOMI, ARAMI, JUNICHI, KOSHIISHI, AKIRA+, ONO, HIROO, KIMURA, HIDETOSHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	When subjecting a substrate (30) to magnetron plasma processing, a dipole magnet (21) having a plurality of anisotropic segment magnets (22) arranged around an outer wall of a chamber (1) in a ring-shape is provided to thereby form a magnetic field gradient having a magnetic field intensity that gradually decreases from an E pole side toward a W pole side in a plane which intersects perpendicularly with a direction of an electric field between spaced pairs of parallel electrodes along a direction that intersects perpendicularly with a magnetic field direction B. The plurality of anisotropic segment magnets include a first portion (a) which is constituted by the anisotropic segment magnets that are arranged in the vicinity of a domain (A) at the outer side of an end portion of an E pole side of the processed substrate and that have the N poles thereof oriented toward the domain, and a second portion (b) which is constituted by the anisotropic segment magnets that are arranged to have the S poles thereof oriented toward the domain. By means of the first portion and the second portion, the magnetic field intensity of the first and second domains can be partly increased.