Single crystal growth apparatus and single crystal growth method

This invention relates to a single crystal growth apparatus according to the CZ method which has a structure for gripping the lower part of a portion expanded in diameter of a single crystal formed, characterized in that contacting members made from a material having a surface hardness of 70 or more...

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Bibliographische Detailangaben
1. Verfasser:	YAMAGISHI, HIROTOSHI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	This invention relates to a single crystal growth apparatus according to the CZ method which has a structure for gripping the lower part of a portion expanded in diameter of a single crystal formed, characterized in that contacting members made from a material having a surface hardness of 70 or more in Shore hardness and 100 or less in Vickers hardness and a tensile strength of 400 MPa or more are disposed at portions of gripping members where the members contact the lower part of the portion expanded in diameter of a single crystal, the minimum diameter of the constricted part below the portion expanded in diameter of a single crystal is 12 mm or more, and the temperature T(DEG C) of the gripped part of the portion expanded in diameter is from 500 DEG C to 800 DEG C and is controlled so as to satisfy the relation: W ≤ -(4/3)T+1270, in which W represents the weight in kg of a single crystal being engaged and held, to thereby allow the grip of a portion expanded in diameter of a heavy single crystal at a high temperature. The apparatus can be used for growing and drawing up a single crystal rod having a weight as heavy as 400 kg and a large diameter and having a portion expanded in diameter of a high temperature.