Method for depositing metal lines for semiconductor devices
A method for depositing metal lines for semiconductor devices, in accordance with the present invention includes the step of providing a semiconductor wafer including a dielectric layer formed on the wafer (10). The dielectric layer has vias formed therein. The wafer is placed in a deposition chambe...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A method for depositing metal lines for semiconductor devices, in accordance with the present invention includes the step of providing a semiconductor wafer including a dielectric layer formed on the wafer (10). The dielectric layer has vias formed therein. The wafer is placed in a deposition chamber wherein the wafer has a first temperature (12) achieved without preheating. A metal is deposited on the wafer which fills the vias wherein the metal depositing is initiated at a substantially same time as heating the wafer from the first temperature (14 and 16). |
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