Single-substrate-heat-processing apparatus and method for performing reformation and crystallization

A semiconductor wafer W is formed with insulative films from first and second tantalum oxide layers (20, 22). While the first layer (20) in a non-crystalline form is being deposited via chemical vapor deposition, a modifying treatment is conducted to remove organic impurities contained in the first layer (20). Then, the second layer (22) in a non-crystalline form is deposited on the first layer (20) via chemical vapor deposition. Subsequently, an ozone-containing processing gas is supplied to a processing room (34), and the wafer W is heated at the same time to a temperature lower than a crystallization temperature for a certain period so as to remove organic impurities contained in the second layer (22). Afterwards, the wafer W is further heated in the same processing room (34) to a second temperature higher than the crystallization temperature and then cooled to a temperature lower than the crystallization temperature so that the first and second layers (20, 22) are crystallized at the same time.