Method for improving the capacitance characteristic of analog/digital mixed-type IC and LCD driver IC

The present invention discloses a method for improving the capacitance characteristic of analog/digital mixed-type IC and LCD driver IC, and more specifically, a method for improving the conductivity of the amorphous silicon anti-reflection layer on the lower electrode for the capacitor of the analog/digital mixed-type IC and LCD driver IC to improve the capacitance characteristic, which is characterized that after forming a non-conductive amorphous silicon anti-reflection layer on the lower electrode of the capacitor, the arsenic ions (As) with lower power (about 15 keV) and high concentration (about 1E15/cm2) are implanted into the non-conductive amorphous silicon anti-reflection layer, so as to change a non-conductive amorphous silicon layer into a conductive amorphous silicon layer.