Bulk gas delivery system for ion implanters
A gas delivery system (100) for an ion implantation system comprises a gas source at a first voltage potential and an ion source at a second voltage potential which is larger than the first voltage potential. The system (100) further comprises an electrically insulative connector (108) coupled betwe...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A gas delivery system (100) for an ion implantation system comprises a gas source at a first voltage potential and an ion source at a second voltage potential which is larger than the first voltage potential. The system (100) further comprises an electrically insulative connector (108) coupled between the gas source and the ion source. The present invention also comprises a method (200) of delivering gas to an ion implantation system which comprises maintaining (202) a voltage potential of a source gas at a storage location at a first voltage potential that is less than a second voltage potential at an ion source of the ion implantation system and delivering (204) the source gas from the storage location to the ion source. |
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