Estimation method for metal impurity concentration in silicon wafer

The present invention discloses an estimation method for the metal impurity concentration in silicon wafer for chemical analysis on the metal impurity in the dense sulfuric acid, which is characterized in, when dripping the dense sulfuric acid onto the surface of silicon wafer, to extract the metal...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	MIZUNO, MICHIHIKO
Format:	Patent
Sprache:	eng
Schlagworte:	INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS TESTING
Online-Zugang:	Volltext bestellen
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