Estimation method for metal impurity concentration in silicon wafer

The present invention discloses an estimation method for the metal impurity concentration in silicon wafer for chemical analysis on the metal impurity in the dense sulfuric acid, which is characterized in, when dripping the dense sulfuric acid onto the surface of silicon wafer, to extract the metal impurity melted in the silicon wafer into the dense sulfuric acid. For the high precision estimation for the metal in the silicon blocks, except for improving the sensitivity of the analyzer itself, the method according to the present invention can solve the problem of extracting the metal contained inside the silicon toward the surface and recycling.