Integrated memory with memory-cells with magnetoresistive memory-effect

An integrated memory has memory-cells (MC) with magnetoresistive memory-effect in a matrix-formed memory-cells-array (1). The memory-cells (MC) are connected respectively between one of the column-lines (BL) and one of the row-lines (WL). The column-lines (BL) are connected respectively with a read-...

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Bibliographische Detailangaben

Hauptverfasser:	THEWES, ROLAND DR, SCHLOSSER, TILL DR
Format:	Patent
Sprache:	eng
Schlagworte:	AMPLIFIERS BASIC ELECTRONIC CIRCUITRY ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES
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