Integrated memory with memory-cells with magnetoresistive memory-effect

An integrated memory has memory-cells (MC) with magnetoresistive memory-effect in a matrix-formed memory-cells-array (1). The memory-cells (MC) are connected respectively between one of the column-lines (BL) and one of the row-lines (WL). The column-lines (BL) are connected respectively with a read-amplifier (2) to read out a data-signal of a memory-cell (MC). The read-amplifier (2) has a coupled-back operation-amplifier (3) with a 1st control-input (31), which is connected with one of the column-lines (BL). Between a 2nd control-input (32) of the operation-amplifier (3) and a terminal for a supply-potential (GND) is connected a capacitor (5), through which a compensation of an offset-voltage on the control-inputs (31, 32) of the operation-amplifier (3) is carried out. Thus a relatively reliable detectability of a readable data- signal of one of the memory-cells (MC) can be attained.