Semiconductor memory element

This invention relates to a semiconductor memory element with random access, it has a structure divided into memory-cells (1) and logic-region (2), said structure has a lower oxide-layer (4) arranged on a silicon-substrate (3) and an upper oxide-layer (5) arranged on the layer (4), wherein each memo...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SCHINDLER, GUENTHER DR, DEHM, CHRISTINE DR
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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