DRAM memory cell for DRAM memory device and method for manufacturing it

DRAM memory cell for a DRAM memory having: a MOSFET selection transistor which has a drain region and a source region in a semiconductor substrate column (3), a current channel which runs in the vertical direction between the drain and source regions and which can be actuated by a control gate elect...

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Bibliographische Detailangaben

Hauptverfasser:	HOFMANN, FRANZ DR, SCHLOSSER, TILL DR
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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