Method to increase the capacity in a memory-trench and memory-capacitor with increased capacity

Method to increase the capacity in a memory-trench and memory-capacitor with increased capacity

In the method of this invention, a first silicon-oxide layer (4) and over there a silicon-layer (5) is deposited in the memory-trench (3) by means of chemical vapor deposition. Over the silicon-layer (5) is deposited a layer containing oxidizable metal (6). Then the silicon-layer (5) and the layer c...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: RUF, ALEXANDER DR, KARCHER, WOLFRAM, KEGEL, WILHELM, SCHREMS, MARTIN DR
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:In the method of this invention, a first silicon-oxide layer (4) and over there a silicon-layer (5) is deposited in the memory-trench (3) by means of chemical vapor deposition. Over the silicon-layer (5) is deposited a layer containing oxidizable metal (6). Then the silicon-layer (5) and the layer containing oxidizable metal (6) are oxidized to a silicon-oxide and metal-oxide layer (7).