Halo structure for use in reduced feature size transistors

Halo structure for use in reduced feature size transistors

A process is used to selectively implant dopants in reduced feature size integrated circuits while reducing shadowing. Illustratively, the present invention may be used to form a halo implant in a reduced feature size field effect transistor.

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Bibliographische Detailangaben
Hauptverfasser: HAMAD, AMAR MA, DOYLE, TIMOTHY EDWARD, GINIEKKI, TROY A, YIH, PAI H, CHOI, SEUNMUU
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A process is used to selectively implant dopants in reduced feature size integrated circuits while reducing shadowing. Illustratively, the present invention may be used to form a halo implant in a reduced feature size field effect transistor.