Method for manufacturing semiconductor integrated circuit device and semiconductor integrated circuit device

Method for manufacturing semiconductor integrated circuit device and semiconductor integrated circuit device

For filling isolating trenches in a semiconductor substrate, a coating film is first filled to a depth position halfway in the isolating trenches, then an insulation film formed by CVD is deposited thereon. The insulation film is polished by CMP method, and the isolating trenches are filled with a l...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SAIKAWA, KENJI, MARUYAMA, HIROYUKI, TAKAMATSU, AKIRA, SATO, HIDENORI, SUZUKI, NORIO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
OPTICS
PHYSICS
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:For filling isolating trenches in a semiconductor substrate, a coating film is first filled to a depth position halfway in the isolating trenches, then an insulation film formed by CVD is deposited thereon. The insulation film is polished by CMP method, and the isolating trenches are filled with a laminate film of the coated film and the insulation film after planarization. In addition, for forming electrode pattern and dummy pattern, a coating film is filled to a depth position halfway in the trenches formed in the patterns, then an insulation film by CVD is deposited to complete the gap-filling in trench.