Improved masking methods and etching sequences for patterning electrodes of high density ram capacitors

A method of etching a noble metal electrode layer disposed on a substrate to produce a semiconductor device including a plurality of electrodes separated by a distance equal to or less than about 0.35 m and having a noble metal profile equal to or greater than about 80 DEG. The method comprises heat...

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Bibliographische Detailangaben

Hauptverfasser:	HWANG, JENG H, LIN, TRUE-LON, SCHALLER, JOHN W, MAK, STEVE S. Y, YING, CHENTSAU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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