Improved masking methods and etching sequences for patterning electrodes of high density ram capacitors

A method of etching a noble metal electrode layer disposed on a substrate to produce a semiconductor device including a plurality of electrodes separated by a distance equal to or less than about 0.35 m and having a noble metal profile equal to or greater than about 80 DEG. The method comprises heating the substrate to temperature greater than about 150 DEG C, and etching the noble metal electrode layer by employing a high density inductively coupled plasma of an etchant gas comprising a gas selected from the group consisting nitrogen, oxygen, a halogen (e.g., chlorine), argon, and a gas selected from the group consisting of BCl3, HBr, and SiCl4 mixtures thereof. A semiconductor device having a substrate and a plurality of noble metal electrodes supported by the substrate. The noble metal electrodes have a dimension (e.g., a width) which include a value equal to or less than about 0.3 m and a platinum profile equal to or greater than about 85 DEG. Masking methods and etching sequences for patterning high density RAM capacitors are also provided. The substrate may be heated by a pedestal in a reactor chamber having a dielectric window including a deposit-receiving surface having a surface finish comprising a peak-to-valley roughness height with an average height value of greater than about 1,000 .