Method to remove the re-depositions on a wafer

Method to remove the re-depositions on a wafer

This invention relates to a method to remove the re-depositions on a wafer as well as a wafer which is free from re-depositions. The removal of the re-depositions on the wafer is carried out after applying a protection-layer on the top-electrode and the boundary face of the top-electrode with the di...

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Hauptverfasser: BERGMANN, RENATE DR, DEHM, CHRISTINE DR, HASLER, BARBARA, SCHELER, ULRICH, SCHINDLER, GUENTHER DR.
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator BERGMANN, RENATE DR
DEHM, CHRISTINE DR
HASLER, BARBARA
SCHELER, ULRICH
SCHINDLER, GUENTHER DR.
description This invention relates to a method to remove the re-depositions on a wafer as well as a wafer which is free from re-depositions. The removal of the re-depositions on the wafer is carried out after applying a protection-layer on the top-electrode and the boundary face of the top-electrode with the dielectrics, so that these regions are not damaged by the wet-chemical medium, by which the re-depositions can be effectively removed.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method to remove the re-depositions on a wafer
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