Method to remove the re-depositions on a wafer

This invention relates to a method to remove the re-depositions on a wafer as well as a wafer which is free from re-depositions. The removal of the re-depositions on the wafer is carried out after applying a protection-layer on the top-electrode and the boundary face of the top-electrode with the di...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	BERGMANN, RENATE DR, DEHM, CHRISTINE DR, HASLER, BARBARA, SCHELER, ULRICH, SCHINDLER, GUENTHER DR.
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	This invention relates to a method to remove the re-depositions on a wafer as well as a wafer which is free from re-depositions. The removal of the re-depositions on the wafer is carried out after applying a protection-layer on the top-electrode and the boundary face of the top-electrode with the dielectrics, so that these regions are not damaged by the wet-chemical medium, by which the re-depositions can be effectively removed.