Epoxy resin composition and semiconductor device encapsulated therewith

In an epoxy resin composition comprising an epoxy resin, a curing agent, and 80-90 wt% of a particulate inorganic filler, fine particles having a particle size of less than 3 m account for 10-40 wt% of the inorganic filler, and the inorganic filler has a specific surface area of less than 2.5 m2/g a...

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Bibliographische Detailangaben
Hauptverfasser:	ASANO, EIICHI, HIGUCHI, NORIAKI, SHIOBARA, TOSHIO, TOMIYOSHI, KAZUTOSHI, FUKUMOTO, TAKAAKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CABLES CHEMISTRY COMPOSITIONS BASED THEREON CONDUCTORS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INSULATORS METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP USE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES ASCOMPOUNDING INGREDIENTS
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Beschreibung
Zusammenfassung:	In an epoxy resin composition comprising an epoxy resin, a curing agent, and 80-90 wt% of a particulate inorganic filler, fine particles having a particle size of less than 3 m account for 10-40 wt% of the inorganic filler, and the inorganic filler has a specific surface area of less than 2.5 m2/g as measured by a nitrogen adsorption BET method. The inorganic filler satisfies that when a blend of a bisphenol F type liquid epoxy resin having a viscosity of 30-45 poises at 25 DEG C as measured by Gardner-Holdt method with 75 wt% of the inorganic filler is measured for viscosity at 25 DEG C by means of an E type viscometer, the viscosity at a shear rate of 0.6 s-1 is less than 50,000 poises and the ratio of the viscosity at a shear rate of 0.6 s-1 to the viscosity at a share rate of 10 s-1 is less than 2.5/1. The epoxy resin composition has a low melt viscosity enough to mold on semiconductor devices without die pad and wire deformation.