Semiconductor memory

The present invention relates to a semiconductor memory using two transistors, which is formed by two well-integrated transistors. That is, a write element (vertical transistor) is stacked on another transistor as a read transistor (formed on a substrate using the lower electrode of the vertical transistor as its gate) and the two transistors are formed by field-effect transistors having opposite conductivity types. Thereby complimentary operations of memory cells are allowed, resulting in a highly integrated semiconductor memory having good memory characteristics.