Composition for removing sidewall residue and method of removing sidewall residue

This invention provides a composition for removing sidewall residue and method of removing sidewall residue. Especially, it relates to the removal of sidewall residue containing photoresist polymer and inorganic materials, at low temperature and in short time, produced during etching steps using halogen-containing gases for manufacturing semiconductor device. The composition for removing sidewall residue which comprises an aqueous solution containing both nitric acid and at least one carboxylic acid compound selected from the group consisting of polycarboxylic acids, aminocarboxylic acids, and salts of these, a method of removing sidewall residue, and a process for producing a semiconductor device are the features in this invention. The removal of sidewall residue is effective at a low temperature and in a short time for semiconductor device production without corroding the wiring material, e.g., an aluminum alloy. Thus, a semiconductor device having an aluminum alloy wiring which has undergone substantially no corrosion can be efficiently produced.