Electromagnetic field generator and method of operation

An electromagnetic field generator and method of operation for ion beam deposition of magnetic thin-film materials is presented. A combination of open frame electromagnetic field generator elements provides precise control of magnetic field directionality. This control enables deposition of oriented magnetic films with minimal directionality error. The magnetic field direction may be oriented to enable the deposition of alternating layers of directionally oriented magnetic films. An open frame element reduces the weight of the electromagnetic field generator while truncated corners reduce diagonal clearance that may be required in a vacuum chamber. An open frame design also enables the electromagnetic field generator to surround and thus remain clear of the active deposition area; the electromagnetic field generator can thus be shielded from accumulation of sputtered material. Shielding from accumulation of sputter material reduces maintenance requirements.