Manufacture of semiconductor integrated circuit device

To provide an anti-corrosion technique in forming metal wires by chemical mechanical polishing (CMP), a method for making a semiconductor integrated circuit device according to the present invention comprises: forming a metal layer consisting of copper (Cu) (or copper alloy with copper as the main c...

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Bibliographische Detailangaben
Hauptverfasser:	OHASHI, TADASHI, NOGUCHI, JUNJI, YAMAGUCHI, HIDE, IMAI, TOSHINORI, OWADA, NOBUO
Format:	Patent
Sprache:	eng
Schlagworte:	ADVERTISING ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICESUSING STATIC MEANS TO PRESENT VARIABLE INFORMATION BASIC ELECTRIC ELEMENTS CRYPTOGRAPHY DISPLAY EDUCATION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS PHYSICS SEALS SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS
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